 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MMBT2907ALT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC 2907A -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3 http://onsemi.com THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 mW/C 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 C/W mW mW/C C/W C SOT-23 (TO-236AB) CASE 318 STYLE 6 1 2 3 Max Unit mW ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit DEVICE MARKING OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCE = -30 Vdc, VBE(off) = -0.5 Vdc) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 125C) Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) V(BR)CEO -60 V(BR)CBO -60 V(BR)EBO -5.0 ICEX -- ICBO -- -- IB -- -50 -0.010 -10 nAdc -50 Adc -- nAdc Device MMBT2907ALT1 -- Vdc -- Vdc Vdc 2Fx x = Monthly Date Code ORDERING INFORMATION Package SOT-23 Shipping 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. v v (c) Semiconductor Components Industries, LLC, 1999 1 December, 1999 - Rev. 0 Publication Order Number: MMBT2907ALT1/D MMBT2907ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (3) (IC = -500 mAdc, VCE = -10 Vdc) (3) Collector - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) -- -- VBE(sat) -- -- -1.3 -2.6 -0.4 -1.6 Vdc hFE 75 100 100 100 50 -- -- -- 300 -- Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (3),(4) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo -- Cibo -- 30 8.0 pF -- pF MHz SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time (VCC = -6.0 Vd IC = -150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = -15 mAdc) 15 (VCC = -30 Vdc, IC = -150 mAdc, 30 Vd 150 Ad IB1 = -15 mAdc) 15 ton td tr toff ts tf -- -- -- -- -- -- 45 10 40 100 80 30 ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 -30 V 200 ns v v -30 V 200 +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 MMBT2907ALT1 TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55C -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr 500 VCC = -30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 ts = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Turn-Off Time http://onsemi.com 3 MMBT2907ALT1 TYPICAL SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0 6.0 6.0 4.0 4.0 IC = -50 A -100 A -500 A -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = -10 V +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -0.6 -0.4 -0.2 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients http://onsemi.com 4 MMBT2907ALT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 5 MMBT2907ALT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 BS 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 6 MMBT2907ALT1 Notes http://onsemi.com 7 MMBT2907ALT1 Thermal Clad is a trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MMBT2907ALT1/D |
Price & Availability of MMBT2907ALT1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |